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| STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFETTM II Power MOSFET Features Type STD16NF25 STF16NF25 STP16NF25 VDSS 250V 250V 250V RDS(on) Max <0.235 <0.235 <0.235 ID 13A 13A(1) 13A Pw 3 90W 25W 90W TO-220 1 2 3 1 DPAK 1. Limited only by maximum temperature allowed Exceptional dv/dt capability 100% avalanche tested Application oriented characterization 1 3 2 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Device summary Marking 16NF25 16NF25 16NF25 Package DPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Order codes STD16NF25 STF16NF25 STP16NF25 October 2007 Rev 2 1/16 www.st.com 16 Contents STD16NF25 - STF16NF25 - STP16NF25 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD16NF25 - STF16NF25 - STP16NF25 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK TO-220 VDS VGS ID ID IDM(2) Ptot (3) Unit TO-220FP 250 20 V V 13 (1) Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor 13 8.19 52 90 0.72 A A A W W/C V/ns 8.19(1) 52(1) 25 0.2 15 dv/dt Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Storage temperature -- VISO Tstg Tj 2500 V -55 to 150 Max. operating junction temperature C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area. 3. ISD 13A, di/dt 300A/s, VDD 80% V(BR)DSS, Tj TJMAX Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb TJ Thermal data Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction to pcb max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose -62.5 DPAK TO-220FP 5 50 100 300 -62.5 C/W C/W C/W C 1.39 Unit Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id= 13A, Vdd=50V) Value 13 100 Unit A mJ 3/16 Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 6.5A 2 3 0.195 Min. 250 1 10 100 4 0.235 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) RG td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Intrinsic gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 6.5A Min. Typ. 10 680 125 20 48 2.1 9 17 35 17 18 3 8 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDS = 0V to 200V, VGS = 0 f=1MHz, open drain VDD = 125V, ID = 6.5A RG = 4.7 VGS = 10V (see Figure 18) VDD = 200V, ID = 6.5A, VGS = 10V (see Figure 19) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 4/16 STD16NF25 - STF16NF25 - STP16NF25 Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 13A, VGS = 0 133 651 10 157 895 11 Test conditions Min. Typ. Max. 13 52 1.6 Unit A A V ns C A ns C A ISD = 13A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 60V Reverse recovery current (see Figure 20) ISD = 13A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 60V, Tj = 150C Reverse recovery current (see Figure 20) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/16 Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK Figure 7. Thermal impedance for DPAK 6/16 STD16NF25 - STF16NF25 - STP16NF25 Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Normalized BVDSS vs temperature Figure 11. Static-drain source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/16 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STD16NF25 - STF16NF25 - STP16NF25 Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs starting Tj 8/16 STD16NF25 - STF16NF25 - STP16NF25 Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/16 Package mechanical data STD16NF25 - STF16NF25 - STP16NF25 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 11/16 Package mechanical data STD16NF25 - STF16NF25 - STP16NF25 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 E L2 L5 123 L4 12/16 G STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 13/16 Packaging mechanical data STD16NF25 - STF16NF25 - STP16NF25 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 STD16NF25 - STF16NF25 - STP16NF25 Revision history 6 Revision history Table 8. Date 12-Oct-2007 16-Oct-2007 Document revision history Revision 1 2 Initial release Modified: Figure 13: Capacitance variations Changes 15/16 STD16NF25 - STF16NF25 - STP16NF25 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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